slotted photointerrupter MIT-5A116-U description package dimensions the MIT-5A116-U consists of a gallium arsenide infrared emitting diode and a npn silicon phototran- sistor built in a black plastic housing . it is a trans- missive subminiature photointerrupter. features l non -contact switching l for- direct pc board l dual - in - line socket mounting l fast switching speed l choice of mounting configuration. note 1. tolerance is 0.25 mm (.006") unless otherwise noted. absolute maximum ratings @t a =25 o c parameter symbol maximum rating unit continuous forward current i f 50 ma input reverse voltage v r 5 v power dissipation p ad 75 mw collector-emitter breakdown voltage v (br)ceo 30 v output emitter-collector breakdown voltage v (br)eco 5 v collector power dissipation p c 75 mw total power dissipation p tot mw operating temperature range t opr -25 o c to + 85 o c storage temperature range t stg -40 o c to + 100 o c 04/01/2002 100 unity opto technology co., ltd. 0.50typ 0.70 (.027) 6.60 0.10 9.00 0.30 0.50 0.10 14.00(.551) (.038.004) 7.50 0.30 (.295.012) 6.00 0.10 (.236.004) 5.00 0.20 (.197.008) 4 3 2.50(.098) 10.00(.394) 0.70(.028) 10.00min (.394) (.406.012) 1.00(.040) min 2.35 0.10 6.00 (.236) 5.20 0.10 2- f 0.70 0.10 (.260.004) (.028004) (.205.004) a a' (.020) 3.70 0.20 2.54 nom a-a' section (.146.008) (.020.004) (.100) b b' 1.50(.059) 0.50 0.10 2.54 b-b' section (.020.004) (.100) 5.20(.205) 0.90 (.035) 1.70 (.067) 1 2
MIT-5A116-U optical-electrical characteristics @t a =25 o c parameter symbol min. typ. max. unit. test conditions input forward voltage v f - 1.2 1.4 v i f =20ma reverse current i r - - 10 m a v r =5v output collector dark current iceo - - 100 na vce =10v v ce(sat) - - 0.4 v ic=0.1ma,ee=0.1mw/cm 2 collector current ic (on) 0.4 - 4 ma i f =20ma, vce =5v transfer cha- response time (rise) t r - 20 100 m s ic=100 m a, vce =5v racteristics response time (fall) t f - 20 100 m s r l =1k, d =1mm typical optical-electrical characteristic curves 04/01/2002 collector emitter saturation voltage unity opto technology co., ltd. 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 20 40 60 80 100 120 -25 0 25 50 75 100 ambient temperature t a ( o c ) fig.2 power dissipation vs ambient temperature power dissipation (mw) p tot p d , p c collector current ic ( m a) vce=2v ta=25 o c forward current i f (ma) fig.4 collector current vs forward voltage 0 10 20 30 40 50 60 -25 0 25 50 75 100 ambient temperature t a fig.1 forward current vs . ambient temperature relative collector current (%) ambient temperature t a ( o c ) fig.6 relative collector current vs . t a forward current i f (ma) forward current i f (ma) 0 100 200 300 400 500 600 700 0 2 4 6 8 10 12 collector-emitter voltage vce (v) fig.5 collector current vs. vce ta=25 o c collector current ic ( m a) i f =15ma 10ma 4ma 20ma forward voltage v f (v) fig.3 forward current vs forward voltage 0 20 40 60 80 100 0.8 1.2 1.6 2.0 2.4 2.8 0 20 40 60 80 100 120 -25 0 25 50 75 100
MIT-5A116-U typical optical-electrical characteristic curves 4 response time measurement circuit sensing position characteristics (typical) (center of optical axis) 04/01/2002 0 20 40 60 80 100 700 800 900 1000 1100 1200 0 25 50 75 100 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 -6 10 -7 10 -8 10 -9 10 -10 v ce =20v response time ( m s) load resistance r t (k w ) fig.8 response time vs. load resistance collector dark current i ceo unity opto technology co., ltd. relative sensitivity (%) wavelength (nm) fig.9 spectral sensitivity (detecting side) ambient temperature t a ( o c ) fig.7 collector dark current vs. ambient temperature ta=25 o c input output 90 % 10 % tr tf t t 0 50 100 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) relative light current i l (%) distance d (mm) y x 0 + 0 + y x i f =20ma v ce =5v ta=25 o c i f =20ma v ce =5v ta=25 o c v ce =2v i c =100ma ta=25 o c il input v cc output vr
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